Semiconductor memory device and high-voltage switching circuit

Details Semiconductor memory device and high-voltage switching circuit Semiconductor memory device and high-voltage switching circuit

1997-09-30

1998-10-27

Nguyen, Tan T.

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36518511, G11C 700

Patent

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058286217

ABSTRACT:
A semiconductor memory device comprises an array of electrically rewritable memory cells which are arranged in a matrix, erasing section for applying an erasing voltage to the memory cells to effect erasing, and writing section for applying a writing voltage to the memory cells to effect writing, wherein in the erasing section and writing section, either MOS transistors to which a voltage higher than the erasing voltage and writing voltage is applied or MOS transistors which transfer a voltage higher than the erasing voltage and writing voltage contain MOS transistors which are in a weak inversion state or an inversion state with their substrate bias voltage, gate voltage and source voltage at 0 V.

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patent: 5402382 (1995-03-01), Miyawaki et al.
patent: 5422855 (1995-06-01), Eslick et al.
patent: 5490118 (1996-02-01), Nishioka et al.

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