Static information storage and retrieval – Floating gate – Particular connection
Patent
1997-01-17
1998-01-13
Nguyen, Tan T.
Static information storage and retrieval
Floating gate
Particular connection
36518515, 36518523, 36518529, G11C 1600
Patent
active
057086060
ABSTRACT:
A semiconductor memory device comprises an array of electrically rewritable memory cells which are arranged in a matrix, erasing section for applying an erasing voltage to the memory cells to effect erasing, and writing section for applying a writing voltage to the memory cells to effect writing, wherein in the erasing section and writing section, either MOS transistors to which a voltage higher than the erasing voltage and writing voltage is applied or MOS transistors which transfer a voltage higher than the erasing voltage and writing voltage contain MOS transistors which are in a weak inversion state or an inversion state with their substrate bias voltage, gate voltage and source voltage at 0 V.
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Takeuchi Ken
Tanaka Tomoharu
Tanzawa Toru
Kabushiki Kaisha Toshiba
Nguyen Tan T.
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