Semiconductor memory device and fabricating method thereof

Details Semiconductor memory device and fabricating method thereof Semiconductor memory device and fabricating method thereof

1988-10-05

1990-09-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437228, 437229, 437919, H01L 2132, H01L 21426

Patent

active

049563106

ABSTRACT:
A semiconductor memory device in accordance with the present invention comprises: a semiconductor substrate (1) of a first conductivity type; a charge storage region (6) and a bit line region (7) of a second conductivity type formed on a main surface of the substrate; highly doped regions (12a, 12b) of the first conductivity type formed respectively contiguous to only the bottom boundaries of the charge storage region (6) and the bit line region (7).

REFERENCES:
patent: 4350536 (1982-09-01), Nakano et al.
patent: 4507159 (1985-03-01), Erb
Wolf and Tauber, "Silicon Processing for The USLI Era", Lattice Press, Sunset Beach, Calif., 9-1-86, pp. 446-458.

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