Semiconductor memory device and driving method thereof

Details Semiconductor memory device and driving method thereof Semiconductor memory device and driving method thereof

2008-10-02

2010-12-21

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185260, C365S185180, C365S185240, C365S185190, C365S185210

Reexamination Certificate

active

07855917

ABSTRACT:
The disclosure concerns a memory including a floating body provided in a semiconductor layer between a source and a drain and storing data; a first gate dielectric provided on a first surface of the body; a first gate electrode provided on the first surface via the first gate dielectric; a second gate dielectric provided on a second surface of the body different from the first surface; a second gate electrode provided on the second surface via the second gate dielectric; a driver driving the first gate electrode and the second gate electrode; and a sense amplifier writing into the memory cells first data showing a sate of a small charge amount in a state that a voltage of the second gate electrode at a data writing time is brought closer to a potential of the source layer than a voltage of the second gate electrode at a data holding time.

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Takashi Ohsawa et al, “An 18.5ns 128Mb SOI DRAM with a Floating Body Cell”, IEEE 2005 International Solid-State Circuits Conference, Digest of Technical Papers, vol. 48, First Edition, Feb. 9, 2005, 5 pages.

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