Patent
1983-10-26
1990-05-15
Wojciechowicz, Edward J.
357 239, 357 2311, 357 2314, 357 49, 357 52, 357 54, 357 55, 357 59, 357 71, H01L 2978
Patent
active
049262220
ABSTRACT:
A semiconductor memory device and a method of manufacturing the device wherein a field insulation is formed in a surface of a semiconductor body except for the source, drain and channel regions, a first floating gate is self-aligned to the channel region, a second gate insulated from the first floating gate covers the first floating gate and the first insulator having a width substantially same as the length of the channel region between the source and the drain regions.
REFERENCES:
patent: 3899373 (1975-08-01), Antipov
patent: 4112509 (1978-09-01), Wass
patent: 4122544 (1978-10-01), McElroy
patent: 4272774 (1981-06-01), Boettcher
Kosa Yasunobu
Shimizu Shinji
Hitachi , Ltd.
Wojciechowicz Edward J.
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