Semiconductor memory device adaptable to external power supplies

Electrical transmission or interconnection systems – Plural supply circuits or sources – Connecting or disconnecting

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307 75, 307 80, 307130, 363147, 363142, H02J 110

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active

059295392

ABSTRACT:
A semiconductor memory device includes a plurality of external power supply pads P1 to P3. Connection between external power supply pads P1 to P3 and an external power supply is determined in accordance with the voltage of the external power supply to be used, and the connection is switched by bonding. External power supply of a high voltage level is connected to an external power supply pad P2 which is connected to VDC1 and VDC2. A circuit including memory cells operates using the voltage applied from VDC1 or external power supply pad P3, while a group of word line drivers operates using the voltage applied from VDC2 or external power supply pad P1. VDC1 down converts the external power supply voltage, and VDC2 down converts it in accordance with the level of the voltage of the external power supply voltage, and generates internal power supply voltages, respectively. Accordingly, a semiconductor memory device which operates adapted to different external power supplies can be obtained.

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Furuyama et al. "A New On-Chip Voltage Converter for Submicrometer High-Density Dram's", Jun. 3, 1987, pp. 437-441.

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