Semiconductor memory device achieving reduction in access time w

Details Semiconductor memory device achieving reduction in access time w Semiconductor memory device achieving reduction in access time w

1996-11-18

1999-05-04

Zarabian, A.

Static information storage and retrieval

Powering

36518909, G11C 700

Patent

active

059011025

ABSTRACT:
Internal power supply voltage Vint is generated from internal high voltage Vpp used for word line driving or the like, using an n channel MOS transistor which operates in a source follower mode. During operation of internal circuitry, gate potential of this source follower transistor is boosted by charge pumping operation of a capacitor. Thus, conductance of the source follower mode transistor can be increased during operation of the internal circuitry without using an internal high voltage generating circuit dedicated to generation of internal power supply voltage.

REFERENCES:
patent: 5349559 (1994-09-01), Park
patent: 5361000 (1994-11-01), Koshikawa
patent: 5694364 (1997-12-01), Morishita
"An Experimental 1 Mbit DRAM Based on high S/N Design", R. Hori et al., IEEE Journal of Solid-State Circuits, vol. Sc-19, No. 5, Oct. 1984, pp. 634-639.
"A 34-ns 16-Mb DRAM with Controllable Voltage Down-Conventer", H. Hidaka et al. IEEE Journal of Solid-State Circuits, vol. 27, No. 7 Jul. 1992, pp. 1020-1027.

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