Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1989-12-11

1991-02-26

Prenty, Mark

357 54, 357 59, H01L 2978, H01L 2934, H01L 2904

Patent

active

049965727

ABSTRACT:
A semiconductor memory device containing a number of memory cells each having a floating gate, an erase gate, and a control gate. In a data erasure mode, electrons are discharged from the floating gate into the erase gate electrode. An insulating film interlaid between the erase gate and the control gate has a three-layered structure consisting of a silicon oxide film, a silicon nitride film, and a silicon oxide film.

REFERENCES:
patent: 4437172 (1984-03-01), Masuoka
patent: 4437174 (1984-03-01), Masuoka
patent: 4466081 (1984-08-01), Masuoka
Masuoka et al., A Flash E.sup.2 Prom Cell Using Triple Polysilicon Technology, Proceedings of the IEEE International Electron Devices Meeting, Dec. 9-12, 1984.

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