Static information storage and retrieval – Interconnection arrangements
Reexamination Certificate
2011-01-18
2011-01-18
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Interconnection arrangements
C365S072000, C365S196000, C365S205000, C365S104000
Reexamination Certificate
active
07872893
ABSTRACT:
A semiconductor memory device having a hierarchical bit line structure includes memory cells and an amplification circuit for amplifying a signal read from one of the memory cells via a bit line. A cell N-well region in which the P-channel transistors of the memory cell are formed and an amplification-circuit N-well region in which the P-channel transistors of the amplification circuit are formed are formed continuously.
REFERENCES:
patent: 6014338 (2000-01-01), Wang et al.
patent: 6105123 (2000-08-01), Raje
patent: 6243292 (2001-06-01), Kobayashi et al.
patent: 6347062 (2002-02-01), Nii et al.
patent: 6535453 (2003-03-01), Nii et al.
patent: 6807124 (2004-10-01), Tsuda et al.
patent: 7612417 (2009-11-01), Osada et al.
patent: 2002/0071324 (2002-06-01), Kitsukawa et al.
patent: 2007/0025174 (2007-02-01), Lee et al.
patent: 2002-043441 (2002-02-01), None
patent: 2004-047003 (2004-02-01), None
patent: 2004-055130 (2004-02-01), None
Ishikura Satoshi
Kurumada Marefusa
Terano Toshio
Le Thong Q
McDermott Will & Emery LLP
Panasonic Corporation
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2717072