Semiconductor memory device

Static information storage and retrieval – Interconnection arrangements

Reexamination Certificate

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Details

C365S072000, C365S196000, C365S205000, C365S104000

Reexamination Certificate

active

07872893

ABSTRACT:
A semiconductor memory device having a hierarchical bit line structure includes memory cells and an amplification circuit for amplifying a signal read from one of the memory cells via a bit line. A cell N-well region in which the P-channel transistors of the memory cell are formed and an amplification-circuit N-well region in which the P-channel transistors of the amplification circuit are formed are formed continuously.

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patent: 6243292 (2001-06-01), Kobayashi et al.
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patent: 6807124 (2004-10-01), Tsuda et al.
patent: 7612417 (2009-11-01), Osada et al.
patent: 2002/0071324 (2002-06-01), Kitsukawa et al.
patent: 2007/0025174 (2007-02-01), Lee et al.
patent: 2002-043441 (2002-02-01), None
patent: 2004-047003 (2004-02-01), None
patent: 2004-055130 (2004-02-01), None

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