Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2011-04-12

2011-04-12

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S204000

Reexamination Certificate

active

07924627

ABSTRACT:
In a semiconductor memory device, a voltage rise due to IR-DROP is suppressed which occurs when a ground voltage is applied to a memory cell during a program operation. Discharge transistors are provided between the ground and bit lines connected to the source and drain of the memory cell. The discharge transistors receive mutually independent discharge control signals which are generated and outputted from a DS decoder driver at the respective gates thereof. To the bit line which applies the ground voltage to the memory cell, the ground voltage can be set using the discharge transistor.

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