Semiconductor memory device

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S189050, C365S230030

Reexamination Certificate

active

07916534

ABSTRACT:
A semiconductor memory device of the invention comprises a memory cell array which includes a first region that has a plurality of memory cells each capable of storing n-bit data (n is a natural number) and a second region that has a plurality of memory cells each capable of storing k-bit data (k>n: k is a natural number), a data storage circuit which includes a plurality of data caches, and a control circuit which controls the memory cell array and the data storage circuit in such a manner that the k-bit data read from the k
number of memory cells in the first region are stored into the data storage circuit and the k-bit data are stored into the memory cells in the second region.

REFERENCES:
patent: 5930167 (1999-07-01), Lee et al.
patent: 6122193 (2000-09-01), Shibata et al.
patent: 6496409 (2002-12-01), Kobayashi et al.
patent: 6933194 (2005-08-01), Narita et al.
patent: 2006/0227602 (2006-10-01), Honma et al.
patent: 2007/0211530 (2007-09-01), Nakano
patent: 2008/0104309 (2008-05-01), Cheon et al.
patent: 2002-16154 (2002-01-01), None
U.S. Appl. No. 12/060,630, filed Apr. 1, 2008, Tanaka.
U.S. Appl. No. 12/840,567, filed Jul. 21, 2010, Shibata, et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2661164

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.