Static information storage and retrieval – Powering
Reexamination Certificate
2011-02-08
2011-02-08
Dinh, Son (Department: 2824)
Static information storage and retrieval
Powering
C365S193000
Reexamination Certificate
active
07885135
ABSTRACT:
A semiconductor memory device that prevents a power noise generated at a data input/output pad in a read operation from affecting a data strobe signal pad. The semiconductor memory device includes first power supply voltage pads for a data output circuit, a first power mesh, and a second power supply voltage pad for a data strobe signal output circuit. The first power mesh connects first power supply voltage pads to one another. The second power supply voltage pad is electrically separated from the first power mesh.
REFERENCES:
patent: 5650975 (1997-07-01), Hamade et al.
patent: 6480989 (2002-11-01), Chan et al.
patent: 6707738 (2004-03-01), Choi et al.
patent: 7336089 (2008-02-01), Yang et al.
patent: 2006/0123376 (2006-06-01), Vogel et al.
patent: 1020040066306 (2004-07-01), None
patent: 1020040107244 (2004-12-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Jul. 28, 2009 with an English Translation.
Lee Kang-Seol
Yoon Seok-Cheol
Dinh Son
Hynix / Semiconductor Inc.
IP & T Group LLP
Nguyen Nam
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