Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1984-09-26
1986-12-16
James, Andrew J.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 2312, 357 59, 357 41, 357 239, 365104, H01L 2978, H01L 2702, H01L 2904, G11C 1700
Patent
active
046300899
ABSTRACT:
A semiconductor memory device including a first MIS transistor having source and drain regions formed in a substrate and a gate electrode provided on the substrate through an insulating layer; a semiconductor layer provided on the first MIS transistor through the insulating layer and being in contact with the source and drain regions of the first MIS transistor; a second MIS transistor having source and drain regions formed in the semiconductor layer and being in contact with the source and drain regions of the first MIS transistor and having a gate electrode provided on the semiconductor layer through an insulating layer; and a bit line being in contact with the source or drain region of the second MIS transistor and extended on the second MIS transistor; each gate electrode of the first and the second MIS transistors being connected with different word lines respectively, and impurities having an amount more than a required value being doped to at least one of the substrate and the semiconductor layer below the gate electrode of the first MIS transistor and the semiconductor.
REFERENCES:
patent: 4364167 (1982-12-01), Donley
patent: 4476475 (1984-10-01), Naem et al.
Electronics International, vol. 56, No. 19, Sep. 1983.
IEEE Journal of Solid-State Circuits, vol. SC-17, No. 2, Apr. 1982.
Sasaki Nobuo
Suzuki Yasuo
Fujitsu Limited
James Andrew J.
Limanek R. P.
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