Semiconductor memory device

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365189, G11C 1140

Patent

active

047093544

ABSTRACT:
A semiconductor memory device includes a plurality of memory cell rows each including a plurality of memory cells; a plurality of row selection signal lines each for transmitting a row selection signal to the memory cells of each memory cell row; and a row decoder for giving a row selection signal to the row selection signal line connected to the memory cells on a memory cell row in accordance with the row address input externally, wherein the row selection signal is at a power supply voltage level during a reading-out period, an intermediate voltage level between the power supply voltage and a ground level during the writing-in period, and the ground level at periods other than the writing-in and reading-out periods.

REFERENCES:
A 64Kb CMOS RAM, by Satoshi Konishi et al., ISSCC Digest of Technical Papers (1982).
A 20ns 64K CMOS SRAM, by Osamu Minato et al., ISSCC Digest of Technical Papers (1984).

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