Semiconductor memory device

Static information storage and retrieval – Magnetic bubbles – Guide structure

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Details

357 59, 357 15, 365210, H01L 2710, H01L 2715

Patent

active

047990899

ABSTRACT:
A semiconductor memory device, in which many memory cells formed by transistors having a Schottky barrier transistor as a load are arranged along word lines and the memory cells are driven from one end of the word lines by word drivers. Dummy cells are formed between the word drivers and the memory cells adjacent to the word drivers, so that a forward voltage of the memory cells adjacent to the word drivers is not affected by polycrystalline silicon in the word drivers.

REFERENCES:
patent: 3540010 (1970-11-01), Heightley et al.
patent: 3686644 (1972-08-01), Christensen
patent: 4044341 (1977-08-01), Stewart et al.
patent: 4479200 (1984-10-01), Sato et al.
patent: 4551820 (1985-11-01), Matsuura

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