Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1991-09-24

1993-02-23

James, Andrew J.

357 234, 357 238, H01L 2978, H01L 7152, H01L 4902

Patent

active

051894971

ABSTRACT:
This invention discloses an EEPROM which increases an erasing voltage V.sub.pp to be applied during a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in the memory cell transistor in order to improve the erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carriers be easily generated and to thereby improve writing efficiency.

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