Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1995-07-31

1997-05-06

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257209, 257768, H01L 2710, H01L 2900, H01L 2348

Patent

active

056274009

ABSTRACT:
A semiconductor memory device including (a) a plug buried in a contact hole formed through an upper insulative layer and/or a contact hole formed through upper and lower insulative layers, the plug comprising a metal having a high melting point, (b) a fuse formed in a channel formed through the upper insulative layer, the fuse comprising the same material as that of the plug, and (c) an interconnection layer formed on the upper insulative layer and connected to the plug and opposite ends of the fuse. In the semiconductor memory device, a metal layer, comprising a metal having a high melting point and formed simultaneously with the plug to fill a contact hole therewith, works as a fuse. Thus, it is possible to obtain a low-resistive fuse without increasing the number of fabrication steps relative to the prior art, resulting in higher speed operation of a memory device without cost increase.

REFERENCES:
patent: 4460914 (1984-07-01), te Velde et al.
patent: 4792835 (1988-12-01), Sacarisen et al.
patent: 4811078 (1989-03-01), Tigelaar et al.

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