Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1976-12-27

1978-09-19

Miller, Jr., Stanley D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 23, 357 41, 357 51, 357 71, 365186, H01L 2710

Patent

active

041157958

ABSTRACT:
A memory is formed by a first insulating layer provided on a part of the surface of a semiconductor substrate of a first conductivity type, a first electrode provided on the first insulating layer and a surface region which serves as an electrode on the semiconductor substrate facing the first electrode. A semiconductor region of a second conductivity type is formed in the semiconductor substrate spaced from the surface electrode of the substrate, for providing a connection thereof to a digit line. A second electrode is provided between the second conductivity type semiconductor region and the surface region which serves as an electrode of the semiconductor substrate via a second insulating layer. The second electrode extends over a third insulating layer provided on the first electrode, and the extended portion of the second electrode is provided with an electrode secured thereto for providing a connection of the second electrode to an address selection line.

REFERENCES:
patent: 4012757 (1977-03-01), Koo

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