Semiconductor memory device

Fishing – trapping – and vermin destroying

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437 52, 437 41, 437238, 437244, 257333, 257390, 257394, 148DIG116, 148DIG163, H01L 21265, H01L 2702

Patent

active

053087810

ABSTRACT:
A semiconductor memory device comprising a substrate, a longitudinal source diffusion layer for a plurality of memory transistor source regions continuously formed on the substrate, and a longitudinal drain diffusion layer for a plurality of memory transistor drain regions continuously formed on the substrate in parallel to the source diffusion layer. A word line is formed crossing over the diffusion layers. And an electrically insulating film is interposed between the word line and the diffusion layers. The insulating film is thicker than a gate oxide film formed between the diffusion layers.

REFERENCES:
patent: 5023682 (1991-06-01), Shimizu et al.

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