Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1984-01-17

1985-08-27

Munson, Gene M.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 2311, 357 41, 357 59, 365149, 365182, H01L 2978, H01L 2702, H01L 2904

Patent

active

045381666

ABSTRACT:
A 1-transistor and 1-capacitor type memory cell includes a first capacitor electrode and a field shield electrode which serves as the second capacitor electrode of the memory cell. A high impurity concentration layer is formed just beneath the first electrode of the capacitor of the memory cell and extends to a field region to form a channel stop area. However, the high impurity concentration layer is inhibited from extending to the transistor gate. This arrangement provides so-called 1-transistor and 1-capacitor type memory cells which are highly integrated, have a long persisting time and are resistant to alpha rays.

REFERENCES:
patent: T964009 (1977-11-01), Chiu et al.
patent: 3387286 (1968-06-01), Dennard
patent: 3811076 (1974-05-01), Smith
patent: 4095251 (1978-06-01), Dennard et al.
patent: 4115871 (1978-09-01), Varadi
patent: 4164751 (1979-08-01), Tasch, Jr.
patent: 4262298 (1981-04-01), Tuan et al.
Dennard et al., "Self-Aligned Field Shield Process", IBM Technical Disclosure Bulletin, vol. 16, (7/73), pp. 507-508.
"Alpha Particles May Be Cause of Soft Errors in Memory", Electronic Design, vol. 26, (5/78), p. 37.

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