Semiconductor memory device

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 59, 357 231, 357 236, 357 45, 357 65, 365186, H01L 2946, H01L 2954, H01L 2962

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046125655

ABSTRACT:
In a dynamic memory having a plurality of memory cells each of which consists of a MIS type field effect transistor and a charge storing capacitor connected thereto; a dynamic memory is disclosed wherein one electrode of the capacitor is made of a semiconductor layer which is formed on a semiconductor body through an insulating film and wherein a word line a part of which serves as a gate electrode of the MIS type field effect transistor is made of a conductor layer of multilayer structure which consists of a layer of semiconductor and a high-fusing metal layer containing the semiconductor.

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