Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1994-09-16

1996-03-19

Nguyen, Viet Q.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Synthesizer

327185, 327199, 327208, 327210, 327214, 327170, 327365, 327437, 327374, H03K 1716, G06F 1300

Patent

active

055006140

ABSTRACT:
A semiconductor memory device which is capable of reducing a delay in the conversion of an input chip enable signal having a TTL level, providing a quick chip enable access and avoiding an increase in current consumption despite the quick chip enable access. The semiconductor memory device in one embodiment includes an input buffer outputting a signal having a CMOS level in response to a chip enable signal having a TTL level, and having a plurality of transistors whose gate lengths are set to first dimensions, and a second input buffer activated in response to both another input signal having a TTL level and the signal having the CMOS level, and having a plurality of transistors whose gate lengths are set to second dimensions greater than the first dimensions. Further, a semiconductor memory device in another embodiment includes an input buffer outputting a signal having a CMOS level in response to a chip enable signal having a TTL level and having a plurality of transistors whose gate widths are set to first dimensions, and a second input buffer activated in response to both another input signal having a TTL level and the signal having the CMOS level and having a plurality of transistors whose gate widths are set to second dimensions smaller than the first dimensions.

REFERENCES:
patent: 5266848 (1993-11-01), Nakagome et al.
patent: 5398318 (1995-03-01), Hiraishi et al.

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