Static information storage and retrieval – Floating gate – Particular biasing
Patent
1999-03-03
2000-05-30
Hoang, Huan
Static information storage and retrieval
Floating gate
Particular biasing
36518525, 36518518, G11C 1606
Patent
active
060698241
ABSTRACT:
A plurality of pull-down transistors, each grounding a source line at discrete positions, are provided in order that current, flowing from bit lines through some of nonvolatile memory cells having lower threshold voltages into the source line, is not concentrated at a single pull-down transistor in a source line driver during a read cycle.
REFERENCES:
patent: 5406521 (1995-04-01), Hara
patent: 5661686 (1997-08-01), Gotou
patent: 5912845 (1999-07-01), Chen et al.
patent: 5936891 (1999-08-01), Sekiguchi
Kojima Makoto
Ogura Tomoko
Halo LSI Design and Device Technologies, Inc.
Hoang Huan
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1915650