Semiconductor memory device

Static information storage and retrieval – Read only systems – Fusible

Patent

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Details

365105, 365175, 3072381, G11C 1136, G11C 1706

Patent

active

042875692

ABSTRACT:
In a semiconductor memory device having a plurality of memory cells located at a cross position of a plurality of bit lines and a plurality of word lines, the memory cell comprising a series circuit of an information storing element such as a diode or a fuse and a PNP type transistor. An N type epitaxial layer is used as a word line and the P type semiconductor substrate is used as a collector output line.

REFERENCES:
patent: 3529299 (1970-09-01), Chung
patent: 3611319 (1971-10-01), Hyatt
patent: 3742592 (1973-07-01), Rizzi et al.
patent: 4064493 (1977-12-01), Daves
patent: 4112505 (1978-09-01), Duval et al.
patent: 4131909 (1978-12-01), Matsuda

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