Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1989-10-16
1991-05-14
James, Andrew J.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 31, 357 32, 357 34, 365 34, H01L 2972, H01L 2714, H01L 3100, H01L 3114
Patent
active
050160753
ABSTRACT:
A semiconductor memory device is constructed of a lateral bipolar transistor as a load element. The base region of the lateral bipolar transistor has an impurity concentration which is increased from the upper surface of the base region in the depth direction of the base region.
REFERENCES:
patent: 4056810 (1977-11-01), Hart et al.
patent: 4152627 (1979-05-01), Priel et al.
patent: 4257059 (1981-03-01), Herndon
patent: 4320410 (1982-03-01), Nishizawa
patent: 4580244 (1986-04-01), Birrittella
patent: 4589096 (1986-05-01), Kaneko et al.
patent: 4667218 (1987-05-01), Takahashi
patent: 4826780 (1989-05-01), Takemoto et al.
patent: 4914629 (1990-04-01), Blake et al.
Bhattacharyya et al., "Dual Base Lateral Bipolar Transistor", Sept. 1977 of IBM, 357 *35.
James Andrew J.
Kim Daniel Y. J.
NEC Corporation
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1652545