Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1986-05-07

1989-02-28

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 36, 357 15, 357 51, 357 71, 365149, 365154, 365155, 365175, H01L 2710, H01L 2948, H01L 2940

Patent

active

048090522

ABSTRACT:
A semiconductor memory device is provided such as the type having flip-flop memory cells each including two bipolar transistors in cross connection with each other. In certain embodiments, at least a part of a Schottky barrier diode or capacitor in the memory cell is formed under a digit line. This memory device is greatly reduced in its required area, and the Schottky barrier diode and capacitor are negligibly influenced by the digit line. In other embodiments, it is arranged to provide different electrodes for the Schottky barrier diode and the capacitor to optimize construction in a minimized space.

REFERENCES:
patent: 3504430 (1970-04-01), Kubo
patent: 4471405 (1984-09-01), Howard et al.
patent: 4538244 (1985-08-01), Sugo et al.
patent: 4566026 (1986-01-01), Lee et al.
patent: 4636833 (1987-01-01), Nishioka et al.
Murarka, "Refractory Silicides . . . Circuits" J. Vac. Sci. Technol., 17(4) Jul./Aug. 80, pp. 775-792.
IBM TDB, Zandler, "Dynamic Schottky Storage Cell" vol. 17, No. 11, 4/75, pp. 3215-3216.
IBM TDB, Beers et al., "Integrated Harper Cell" vol. 18, No. 9, Feb. 76, pp. 2875-2877.

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1372165