Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1986-10-06
1989-02-28
James, Andrew J.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 71, 365182, H01L 2702
Patent
active
048090468
ABSTRACT:
A static-type semiconductor memory device having a three-layer structure: gate-electrode wiring lines being formed from a first conductive layer of, for example, polycrystalline silicon; word lines, ground lines, and power supply lines being formed from a second conductive layer of, for example, aluminum; and bit lines being formed from a third conductive layer of, for example, aluminum. The bit lines extending in a column direction, and the ground lines extending in a row direction. Thus, providing an improved degree of integration, an improved operating speed, an improved manufacturing yield, and a countermeasure for soft errors due to alpha particles.
REFERENCES:
patent: 3808475 (1974-04-01), Beulow et al.
patent: 4240097 (1980-12-01), Raymond, Jr.
patent: 4376983 (1983-03-01), Tsaur et al.
patent: 4453175 (1984-06-01), Ariizumi et al.
patent: 4458406 (1984-07-01), DeLamoneda et al.
IEEE International Conference on Circuits and Computers, vol. 1 of 2, Oct. 1-3, 1980, pp. 4-11, "Future Directions in MOSFET Random Access Memories" European Search Report, The Hague, 9/19/85 Examiner: M. L. Odgers.
IEEE Journal of Solid-State Circuits, vol. SC-15, No. 5, Oct. 1980, pp. 854-861, Ohzone et al., "An 8K.times.8 Bit Static MOS RAM Fabricated by n-Mo S
-well CMOS Technology".
Aoyama Keizo
Seki Teruo
Yamauchi Takahiko
Fujitsu Limited
James Andrew J.
Prenty Mark
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1372086