Semiconductor memory device

Fishing – trapping – and vermin destroying

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437 47, 437 60, 437919, H01L 218242

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active

054242355

ABSTRACT:
A semiconductor memory device where memory cells are formed on one surface of a semiconductor layer, and bit lines are formed on the other surface thereof. The bit lines are connected electrically to the memory cells and are formed under the semiconductor layer with a bit-line shielding conductor interposed between the bit lines via an insulating layer, and a bit-line shielding voltage is supplied from the reverse side of the substrate to the bit-line shielding conductor.

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Japanese Abstract vol. 13, No. 280 (E-779) [3628] Jun. 17, 1989.

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