Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1987-12-07

1990-01-09

Gossage, Glenn A.

Static information storage and retrieval

Addressing

Sync/clocking

36518908, 36523006, G11C 800, G11C 1140

Patent

active

048932825

ABSTRACT:
In a semiconductor memory device in accordance with the present invention, a plurality of address signals (A.sub.1 to A.sub.N) are applied to address transition detection (ATD) circuits (31 to 3N) through input buffers (11 to 1N) and according to a level change in the address signals, a pulse signal (ATDi) is applied to an inverter (5) through any of MOS field-effect transistors (41 to 4N). The input level of the inverter (5) falls rapidly in response to the rise of the output level of the ATD circuits (31 to 3N) and rises slowly by the influence of a load device (40). A chip select transition detection (CSTD) circuit (6) generates a pulse signal (CST) in response to the change from a high level to a low level of a chip selection signal (CS) provided from a CS buffer (2). In response to the pulse signal (CST), a p channel MOS field-effect transistor (71) is turned on and a load device (72) is connected between the power supply potential and the input of the inverter (5). As a result, the impedance therebetween is lowered and an ATD signal rises rapidly. Thus, a delay with respect to the access by the address signals can be prevented.

REFERENCES:
patent: 4404474 (1983-09-01), Dingwall
patent: 4405996 (1983-09-01), Stewart
patent: 4408305 (1983-10-01), Kuo
patent: 4471240 (1984-09-01), Novosel
patent: 4614883 (1986-09-01), Sood et al.
patent: 4744063 (1988-05-01), Ohtani et al.
Hardee and Sud, "A Fault-Tolerant 30 ns/375 mW 16K.times.1 NMOS Static Ram", IEEE Journal of Solid-State Circuits, vol. SC-16, No. 5, (Oct. 1981), pp. 435-443.
Intel Corporation: Component Data Catalog, Jan. 1981, pp. 5-1 to 5-14.
"16-K Static RAM Takes New Route to High Speed", by Rahul Sud & Kim C. Hardee, Electronics, Sep. 11, 1980, pp. 117-123.

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