Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1985-12-20

1987-09-01

Wojciechowicz, Edward J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 235, 357 41, 357 45, 365185, H01L 2978

Patent

active

046912169

ABSTRACT:
A semiconductor memory device in which an output of a reference voltage generator for defining the height of a programming high-voltage pulse is changed according to the thickness of a tunnel oxide film and/or a floating gate oxide film of a memory transistor so that a shift amount of a threshold voltage of an EEPROM is maintained at a constant value if the thickness of the oxide films is deviated from a designed value.

REFERENCES:
patent: 4397077 (1983-08-01), Derbenwick et al.
patent: 4527258 (1985-07-01), Guterman
"High-Voltage Regulation and Process Considerations for High-Density 5V-Only E.sup.2 PROM's", by Duane H. Oto et al., IEEE Journal of Solid-State Circuits, vol. SC-18, No. 5, (1983), pp. 532-538.

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