Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1999-03-01

2000-08-29

Elms, Richard

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

36523003, G11C 800

Patent

active

061118087

ABSTRACT:
Disclose is a semiconductor memory device including a plurality of memory cell arrays, row and column decoders for selecting/driving each memory cell, and a plurality of bit line sensing amplifier arrays for sensing data of each memory cell, the semiconductor memory device comprising: a plurality of sub word line driver sections for driving each memory cell with a sub word line enable selection signal (SWLE) decoded by LSB address and with a global word line signal (GWLb) decoded by MSB address in the row decoder; a row decoding precharge signal generating section (RDPRi/VBFi) for applying a precharge signal to the row decoder and a voltage Vbb to the GWLb signal by means of the MSB address PXb; a level shifting section for shifting and transmitting an output signal from the column decoder to column selection lines which connects the column decoder with the bit line sensing amplifier array in series; and a data input/output controlling section for selectively applying an active signal to the bit line sensing amplifier array according to a level of the column selection line.

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