Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1981-09-02

1983-05-03

Hecker, Stuart N.

Static information storage and retrieval

Read only systems

Fusible

357 4, G11C 1700

Patent

active

043822894

ABSTRACT:
A semiconductor memory device comprises an insulation layer and a plurality of polycrystalline silicon layer regions formed on the insulation layer. The polycrystalline silicon layer region includes a semiconductor element region and a meltable semiconductor fuse link region. The two regions are integrated with each other to constitute a unit memory cell. A plurality of unit memory cells connected between bit lines and word lines jointly constitute a memory device. Where required data is written in the memory device, then the semiconductor fuse region of a specified unit memory cell is melted away.

REFERENCES:
patent: 3699395 (1972-10-01), Baleky
patent: 3699403 (1972-10-01), Boleky
patent: 3728591 (1973-04-01), Sunshine
patent: 3976983 (1976-08-01), Moussie

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