Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1992-11-24

1993-08-24

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257211, 257390, 257401, H01L 2348, H01L 2710, H01L 2702, H01L 2904

Patent

active

052392015

ABSTRACT:
A semiconductor memory device is disclosed which has a multilevel conductor structure including conductors of a lower-level and conductors of an upper-level. The memory device comprises first and second memory cells disposed adjacent to and space from each other, a first conductor at the lower-level included in the first memory cell to constitute the first memory cell and having a portion formed along the space between the memory cells, a second conductor at the lower-level included in the second memory cell to constitute the second memory cell and having a portion formed along the space between the memory cells, a third conductor at the upper-level formed to pass along the space between the first and second memory cells, and a dummy conductor at the lower-level formed under the third conductor to lie between the portion of the first conductor and the portion of the second conductor.

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