Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1992-08-26

1995-01-17

Nguyen, Viet Q.

Static information storage and retrieval

Addressing

Using selective matrix

365200, 36523006, 36523001, 257314, H01L 2710, G11C 1140

Patent

active

053831624

ABSTRACT:
A non-volatile memory element comprising a control gate formed by a diffusion layer, a floating gate comprising a conductive layer, the floating gate being partly overlapping with the control gate through a thin insulating layer, and a barrier layer formed to cover a part or the entire part of the floating gate is used as a defect remedy circuit for the memory circuit having read-only memory elements arranged in the form of a matrix for storing defective addresses corresponding to the word lines and bit lines and storing data corresponding thereto respectively.

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