Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2010-11-22
2011-10-11
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C257S309000
Reexamination Certificate
active
08036038
ABSTRACT:
A semiconductor memory device includes a memory cell array including a plurality of blocks each including a memory cell unit, and a selection transistor which selects the memory cell unit, and a row decoder including a first block selector and a second block selector each of which includes a plurality of transfer transistors which are formed to correspond to the plurality of blocks and arranged adjacent to each other in a word-line direction wherein the diffusion layers are formed to oppose each other in the first block selector and the second block selector, and a width between the diffusion layers of the first block selector and the second block selector adjacent to each other in the word-line direction is made larger than a width between the diffusion layers in each of the first block selector and the second block selector adjacent to each other in the word-line direction.
REFERENCES:
patent: 7355231 (2008-04-01), Coursey
patent: 2004/0165451 (2004-08-01), Wake
patent: 2006/0278951 (2006-12-01), Kim
patent: 2007/0183213 (2007-08-01), Kusakabe et al.
patent: 2005-191413 (2005-07-01), None
Fujiu Masaki
Iwai Makoto
Kanazawa Kazuhisa
Nakamura Hiroshi
Dinh Son
Kabushiki Kaisha Toshiba
Nguyen Nam
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4297015