Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2008-09-08

2011-10-04

Ho, Hoang-Quan (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257SE27070, C438S931000

Reexamination Certificate

active

08030662

ABSTRACT:
There is offered a switching resistance RAM that is very much reduced in an occupied area and is highly integrated. Memory cells CEL11-CEL14are formed corresponding to four intersections of word lines WL0and WL1and bit lines BL0and BL1. Each of the memory cells CEL11-CEL14are composed of a switching layer13formed on a surface of an N+ type Si layer11. The switching layer13is electrically connected to the bit line BL0or BL1thereabove through an electrode14. The switching layer13is composed of a SiC layer13A stacked on the surface of the N+ type Si layer11and a Si oxide layer13B stacked on the SiC layer13A. A top surface of the Si oxide layer13B, that is the uppermost layer of the switching layer13, is electrically connected to the corresponding bit line BL0or BL1.

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