Semiconductor memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S071000, C257S330000, C257S300000, C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S060000, C257S328000, C257S334000

Reexamination Certificate

active

08063404

ABSTRACT:
A semiconductor memory device positioned on an SOI substrate. A semiconductor memory device includes two transistors with three terminals which serve as a source, a reading drain and a writing drain, respectively. The writing drain is heavily-doped for high writing efficiency. A floating body region for storing charges is also heavily-doped to reach long data retention time.

REFERENCES:
patent: 5177576 (1993-01-01), Kimura et al.
patent: 6284593 (2001-09-01), Mandelman et al.
patent: 6441422 (2002-08-01), Mandelman et al.
patent: 6759702 (2004-07-01), Radens et al.
patent: 6906372 (2005-06-01), Yamada et al.
patent: 7365384 (2008-04-01), Tran et al.
patent: 2004/0046201 (2004-03-01), Noble

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4258046

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.