Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2010-03-31
2011-11-22
Louie, Wai Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S071000, C257S330000, C257S300000, C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S060000, C257S328000, C257S334000
Reexamination Certificate
active
08063404
ABSTRACT:
A semiconductor memory device positioned on an SOI substrate. A semiconductor memory device includes two transistors with three terminals which serve as a source, a reading drain and a writing drain, respectively. The writing drain is heavily-doped for high writing efficiency. A floating body region for storing charges is also heavily-doped to reach long data retention time.
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Hsu Winston
Jahan Bilkis
Louie Wai Sing
Margo Scott
Nanya Technology Corp.
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