Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-11-27

2010-10-26

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S506000, C257S522000, C257SE21540, C257SE29323

Reexamination Certificate

active

07821086

ABSTRACT:
A semiconductor memory device includes a first write line which is provided in a first direction, a first memory element which is connected to the first write line, a second memory element which is provided to neighbor the first memory element in the first direction, and is connected to the first write line, a first insulation film which is provided on surfaces of the first and second memory elements, and a second insulation film which is provided between the neighboring first and second memory elements and has a lower heat conductivity than the first insulation film.

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H. Hosomi, et al., “A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Swithching: Spin-RAM”, IEDM Technical Digest, 473, IEEE, 2005, 4 pages.

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