Semiconductor memory device

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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Details

C365S185180, C365S185250, C365S185290, C365S185330

Reexamination Certificate

active

07835181

ABSTRACT:
A semiconductor memory device is disclosed, which includes a plurality of NAND cells each comprising a plurality of series-connected memory cell transistors, and a drain-side select transistor and a source-side select transistor connected to a drain-side end and a source-side end of the series-connected memory cell transistors, respectively, a source line commonly connected to the source-side select transistors in the plurality of NAND cells, a first discharge circuit which is connected between the source line and a reference potential and whose conduction
on-conduction is controlled by a first control signal, and a second discharge circuit which is connected between the source line and the reference potential and whose conduction/ non-conduction is controlled by a second control signal different from the first control signal.

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patent: 6813214 (2004-11-01), Cho et al.
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patent: 2000-030473 (2000-01-01), None
Tomoharu Tanaka, et al., “A Quick Intelligent Page-Programming Architectgure and a Shielded Bitline Sensing Method for 3 V—Only NAND Flash Memory”, IEEE Journal of Solid-State Circuits, vol. 29, No. 11, Nov. 1994, p. 1366-1373.

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