Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-08-15
2010-11-16
Phan, Trong (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S185250, C365S185290, C365S185330
Reexamination Certificate
active
07835181
ABSTRACT:
A semiconductor memory device is disclosed, which includes a plurality of NAND cells each comprising a plurality of series-connected memory cell transistors, and a drain-side select transistor and a source-side select transistor connected to a drain-side end and a source-side end of the series-connected memory cell transistors, respectively, a source line commonly connected to the source-side select transistors in the plurality of NAND cells, a first discharge circuit which is connected between the source line and a reference potential and whose conduction
on-conduction is controlled by a first control signal, and a second discharge circuit which is connected between the source line and the reference potential and whose conduction/ non-conduction is controlled by a second control signal different from the first control signal.
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Hosono Koji
Maejima Hiroshi
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Phan Trong
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