Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2009-06-16

2010-12-28

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185230

Reexamination Certificate

active

07859913

ABSTRACT:
There is offered a semiconductor memory device that has reduced number of high withstand voltage transistors so as to suppress an increase in a die size. A second transistor of N channel type is connected between a word line and a decoder circuit. A control signal from a control circuit is applied to a gate of the second transistor. When an output of the decoder circuit is at a low level, the word line is in a non-selected state, and a high voltage from a switching circuit is not outputted to the word line. Instead, the word line is provided with the ground voltage (=non-erasing voltage) from the decoder circuit through the second transistor.

REFERENCES:
patent: 5029130 (1991-07-01), Yeh
patent: 5045488 (1991-09-01), Yeh
patent: 5067108 (1991-11-01), Jenq
patent: 5265052 (1993-11-01), D'Arrigo et al.
patent: 5787037 (1998-07-01), Amanai
patent: 6201747 (2001-03-01), Venkatesh et al.
patent: 7016233 (2006-03-01), Kuo
patent: 11-274329 (1999-10-01), None
patent: 2000-173278 (2000-06-01), None
patent: 2005-159336 (2005-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4199088