Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2009-01-29

2010-11-16

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185090, C365S201000

Reexamination Certificate

active

07835188

ABSTRACT:
Provided is a semiconductor memory device, which realizes characteristic evaluation even in a case where a threshold voltage is a negative potential by a test method which is similar to a case of a positive potential. The semiconductor memory device includes a plurality of memory cells for storing data. When a test signal is input, the semiconductor memory device changes from a normal mode to a test mode for evaluating characteristics of the plurality of memory cells. The semiconductor memory device also includes: a memory cell selecting portion for selecting a memory cell; a constant voltage portion for generating a reference voltage; a constant current portion for generating a reference current; an X switch voltage switching control circuit for supplying one of an X selection signal and a voltage signal input from an external terminal to a gate of the memory cell; a Y switch portion for supplying the reference current to a drain of the memory cell selected by a Y selection signal; a comparator for detecting whether or not a drain voltage that is a voltage of the drain has exceeded the reference voltage; and a decision level changing portion for adjusting a current value of the reference current and a voltage value of the reference voltage so as to change a decision level of the comparator based on a control signal in the test mode.

REFERENCES:
patent: 5784314 (1998-07-01), Sali et al.
patent: 6958947 (2005-10-01), Park et al.
patent: 11-16399 (1999-01-01), None

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