Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-11-29

2010-10-12

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185170

Reexamination Certificate

active

07813171

ABSTRACT:
In a memory cell array, a plurality of memory cells which store data in the form of n values (n is a natural number which is not smaller than 2) which are in first and second to nth states are arranged in a matrix form. Before a write operation of storing data in a first memory cell in the memory cell array, when at least one second memory cell which is adjacent to the first memory cell is in the first state and does not reach a first threshold voltage, a control circuit performs a write operation in the second memory cell up to the first threshold voltage.

REFERENCES:
patent: 5587948 (1996-12-01), Nakai
patent: 5815439 (1998-09-01), Korsh et al.
patent: 5844841 (1998-12-01), Takeuchi et al.
patent: 5870218 (1999-02-01), Jyouno et al.
patent: 5894435 (1999-04-01), Nobukata
patent: 6134140 (2000-10-01), Tanaka et al.
patent: 6657891 (2003-12-01), Shibata et al.
patent: 7298648 (2007-11-01), Lee et al.
patent: 2006/0279993 (2006-12-01), Shibata
patent: 11-176175 (1999-07-01), None
patent: 2000-195280 (2000-07-01), None
patent: 2004-192789 (2004-07-01), None
patent: 2004-192789 (2004-07-01), None
patent: 2004-334956 (2004-11-01), None
patent: 2006139864 (2006-06-01), None
patent: 10-2004-0048344 (2004-06-01), None
U.S. Appl. No. 11/610,193, filed Dec. 13, 2006, Fukuka, et al.
Japanese Office Action Application No. 2004-329343 with English translation, dated May 25, 2010, 9 pages.

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