Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2008-11-28

2010-11-16

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Powering

C365S227000

Reexamination Certificate

active

07835213

ABSTRACT:
A semiconductor memory device with low power consumption and improved transfer rate of an input/output buffer at reduced manufacturing cost is provided. Thick-film transistors are used for a memory cell array33, a row decoder30, and a sense amplifier32, surrounded by a bold broken line. Thick-film transistors having a threshold voltage lower than the aforementioned transistors are used for input buffers11to13and an input/output buffer26, surrounded by a bold line. Thin-film transistors are used for a clock generator16, a command decoder17, a mode register18, a controller20, a row address buffer and refresh counter21, a column address buffer and burst counter22, a data control circuit23, a latch circuit24, a DLL25, and a column decoder31.

REFERENCES:
patent: 6195305 (2001-02-01), Fujisawa et al.
patent: 11-297950 (1999-10-01), None
patent: 2004-200714 (2004-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4180878