Semiconductor memory device

Static information storage and retrieval – Interconnection arrangements – Transistors or diodes

Reexamination Certificate

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C356S154000

Reexamination Certificate

active

07852655

ABSTRACT:
Disclosed is a semiconductor memory device capable of realizing reduction in an SRAM unit cell area. Using as a standard configuration a parallel-type SRAM unit cell having each pair of load transistors, driver transistors and transfer transistors, all or a part of the gate electrodes and active regions configuring at least any one of the pairs of the transistors, for example, the pair of the transfer transistors are configured obliquely in a predetermined direction from the standard configuration. As a result, a size in a cell outside part including the driver transistor and the transfer transistor is reduced. At the same time, a distance between the load transistors in the central part is reduced as compared with that in the standard configuration. Thus, area reduction in the whole SRAM unit cell is realized.

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patent: 6072714 (2000-06-01), Deguchi
patent: 2002/0024856 (2002-02-01), Kumagai et al.
patent: 2004/0212018 (2004-10-01), Shino
patent: 1598805 (2005-11-01), None
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patent: 2003-0034469 (2003-05-01), None
European Search Report dated Aug. 6, 2009, issued in corresponding European Patent Application No. 07113383.9.

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