Static information storage and retrieval – Interconnection arrangements – Transistors or diodes
Reexamination Certificate
2007-08-09
2010-12-14
Phung, Anh (Department: 2824)
Static information storage and retrieval
Interconnection arrangements
Transistors or diodes
C356S154000
Reexamination Certificate
active
07852655
ABSTRACT:
Disclosed is a semiconductor memory device capable of realizing reduction in an SRAM unit cell area. Using as a standard configuration a parallel-type SRAM unit cell having each pair of load transistors, driver transistors and transfer transistors, all or a part of the gate electrodes and active regions configuring at least any one of the pairs of the transistors, for example, the pair of the transfer transistors are configured obliquely in a predetermined direction from the standard configuration. As a result, a size in a cell outside part including the driver transistor and the transfer transistor is reduced. At the same time, a distance between the load transistors in the central part is reduced as compared with that in the standard configuration. Thus, area reduction in the whole SRAM unit cell is realized.
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Byrne Harry W
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Phung Anh
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