Semiconductor memory device

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S200000, C365S019000, C365S226000, C257S288000, C257SE29266, C257SE29324

Reexamination Certificate

active

07602638

ABSTRACT:
A semiconductor memory device is provided which can achieve high performance, such as an improvement in reliability, an improvement in yield, and the like, without increasing the chip area. The semiconductor memory device is a non-volatile semiconductor memory device operable to program and erase data, and hold the data in the absence of a supplied voltage, comprising a memory cell including a first charge localized portion and a second charge localized portion each operable to store static charge corresponding to the data. The second charge localized portion stores static charge corresponding to static charge which should be stored in the first charge localized portion, thereby serving as a backup to the first charge localized portion.

REFERENCES:
patent: 4224686 (1980-09-01), Aneshansley
patent: 5815433 (1998-09-01), Takeuchi
patent: 6657891 (2003-12-01), Shibata et al.
patent: 2004/0004856 (2004-01-01), Sakimura et al.
patent: 05-040702 (1993-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4099874

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.