Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2006-04-06
2009-10-13
Nguyen, Cuong Q (Department: 2811)
Static information storage and retrieval
Floating gate
Multiple values
C365S200000, C365S019000, C365S226000, C257S288000, C257SE29266, C257SE29324
Reexamination Certificate
active
07602638
ABSTRACT:
A semiconductor memory device is provided which can achieve high performance, such as an improvement in reliability, an improvement in yield, and the like, without increasing the chip area. The semiconductor memory device is a non-volatile semiconductor memory device operable to program and erase data, and hold the data in the absence of a supplied voltage, comprising a memory cell including a first charge localized portion and a second charge localized portion each operable to store static charge corresponding to the data. The second charge localized portion stores static charge corresponding to static charge which should be stored in the first charge localized portion, thereby serving as a backup to the first charge localized portion.
REFERENCES:
patent: 4224686 (1980-09-01), Aneshansley
patent: 5815433 (1998-09-01), Takeuchi
patent: 6657891 (2003-12-01), Shibata et al.
patent: 2004/0004856 (2004-01-01), Sakimura et al.
patent: 05-040702 (1993-02-01), None
Lam Cathy N
McDermott Will & Emery LLP
Nguyen Cuong Q
Panasonic Corporation
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