Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-09-25
2009-10-27
Mai, Son L (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S149000, C365S185010
Reexamination Certificate
active
07609551
ABSTRACT:
This disclosure concerns a memory comprising a charge trapping film; a gate insulating film; a back gate on the charge trapping film; a front gate on the gate insulating film; and a body region provided between a drain and a source, wherein the memory includes a first storage state for storing data depending on the number of majority carriers in the body region and a second storage state for storing data depending on the amount of charges in the charge trapping film, and the memory is shifted from the first storage state to the second storage state by converting the number of majority carriers in the body region into the amount of charges in the charge trapping film or from the second storage state to the first storage state by converting the amount of charges in the charge trapping film into the number of majority carriers in the body region.
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Aochi Hideaki
Fukuda Ryo
Hamamoto Takeshi
Nitayama Akihiro
Ohsawa Takashi
Kabushiki Kaisha Toshiba
Mai Son L
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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