Semiconductor memory device

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S149000, C365S185010

Reexamination Certificate

active

07609551

ABSTRACT:
This disclosure concerns a memory comprising a charge trapping film; a gate insulating film; a back gate on the charge trapping film; a front gate on the gate insulating film; and a body region provided between a drain and a source, wherein the memory includes a first storage state for storing data depending on the number of majority carriers in the body region and a second storage state for storing data depending on the amount of charges in the charge trapping film, and the memory is shifted from the first storage state to the second storage state by converting the number of majority carriers in the body region into the amount of charges in the charge trapping film or from the second storage state to the first storage state by converting the amount of charges in the charge trapping film into the number of majority carriers in the body region.

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Chang Woo Oh et al, “A Novel Multi-Functional Silicon-On-ONO (SOONO) MOSFETs for SoC applications: Electrical Characterization for High Performance Transistor and Embeded Memory Applications”, 2006 Symposium on VLSI Technology, Digest of Technical Papers, IEEE, Jun. 13-15, 2006, pp. 58-59 and cover page.

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