Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-08-02
2009-02-03
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
36, 36, 36
Reexamination Certificate
active
07486562
ABSTRACT:
A semiconductor memory device comprises a memory cell array and a sense amp circuit. The memory cell array includes bit lines connected to memory cells operative to store first logic data and second logic data smaller in cell current than the first logic. The sense amp circuit has a clamp transistor operative to clamp a bit line voltage. The sense amp circuit is operative to detect data in a selected memory cell via the clamp transistor and the bit line. The sense amp circuit is operative to read data from the selected memory cell in at least the two of first and second read cycles while a control voltage is applied to a gate of the clamp transistor. Different control voltages are applied to the gate of the clamp transistor in the first and second read cycles.
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Fujita Norihiro
Nakamura Hiroshi
Ogawa Mikio
Ho Hoai V
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tran Anthan T
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