Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2008-02-19

2009-11-17

Mai, Son L (Department: 2827)

Static information storage and retrieval

Read only systems

Fusible

C365S225700

Reexamination Certificate

active

07619914

ABSTRACT:
A memory cell includes an antifuse device that is capable of having data written thereto by breakdown of a gate dielectric film by application of a high voltage. A data inversion portion generates, according to a relationship between the sense amplifier's determination and write data to be written to the memory cell, inverted write data obtained by inverting the write data. The data inversion portion also inverts, when data is read from the memory cell to which the inverted write data is written, the read data and reads it.

REFERENCES:
patent: 6570795 (2003-05-01), Fricke et al.
patent: 7046569 (2006-05-01), Ito et al.
patent: 2008/0198643 (2008-08-01), Shin et al.
patent: 2009/0027973 (2009-01-01), Nakayama et al.
Hiroshi Ito, et al., Pure CMOS One-time Programmable Memory using Gate-Ox Anti-fuse, Proceedings of the IEEE Custom Integrated Circuits Conference, 2004, pp. 469-472.

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