Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-12-12

2008-11-25

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

Transistors or diodes

C365S063000, C365S214000

Reexamination Certificate

active

07457142

ABSTRACT:
A basic cell comprises a memory cell capable of retaining data having at least a binary value, a first selecting transistor connected between a first terminal of the memory cell and the Mth bit line, and a second selecting transistor connected between the first terminal of the memory cell and the M+1th bit line. Agate of the first selecting transistor is connected to the 2·N−1th selecting line, and a gate of the second selecting transistor is connected to the 2·Nth selecting line.

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patent: 2003529880 (2003-10-01), None

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