Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-07-03
2008-12-09
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185090, C365S185230, C365S200000
Reexamination Certificate
active
07463515
ABSTRACT:
A semiconductor memory device includes: a memory cell array with electrically rewritable and non-volatile memory cells arranged therein; a row decoder configured to select a memory cell in the memory cell array, the row decoder including a flag latch, in which a bad block flag is set for a bad block in the memory cell array; a sense amplifier configured to sense data of a selected memory cell in the memory cell array; and an output circuit configured to output read data in the sense amplifier, the output circuit including an output data fixing circuit configured to fix an output data at a logic level in accordance with the bad block flag.
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U.S. Appl. No. 11/773,280, filed Jul. 3, 2007, Shirakawa et al.
U.S. Appl. No. 12/040,155, filed Feb. 29, 2008, Tokiwa.
Shirakawa Masanobu
Tokiwa Naoya
Kabushiki Kaisha Toshiba
Nguyen Tan T.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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